tr8 series silicon triacs l 8 a rms, 70 a pea k l glass passivated wafe r l 400 v to 800 v off-state voltag e l max i g t of 50 ma (quadrants 1 - 3 ) mt1 mt2 g to-220 package (top view) pin 2 is in electrical contact with the mounting base. 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted ) notes: 1. these values apply bidirectionally for any value of resistance between the gate and main t erminal 1 . 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 85 c derate linearly to 110 c case temperature at the rate of 320 ma/ c . 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost . 4. this value applies for one 50-hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost . 5. this value applies for a maximum averaging time of 20 ms . ratin g symbo l valu e uni t repetitive peak off-state voltage (see note 1 ) tr8-400-70 TR8-600-70 tr8-700-70 tr8-800-70 v dr m 400 600 700 80 0 v full-cycle rms on-state current at (or below) 85 c case temperature (see note 2 ) i t(rms ) 8 a peak on-state surge current full-sine-wave (see note 3 ) i ts m 70 a peak on-state surge current half-sine-wave (see note 4 ) i ts m 80 a peak gate curren t i g m 1 a peak gate power dissipation at (or below) 85 c case temperature (pulse width 200 m s ) p g m 2. 2 w average gate power dissipation at (or below) 85 c case temperature (see note 5 ) p g(av ) 0. 9 w operating case temperature rang e t c -40 to +11 0 c storage temperature rang e t st g -40 to +12 5 c lead temperature 1.6 mm from case for 10 second s t l 23 0 c electrical characteristics at 25 c case temperature (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off-state curren t v d = rated v dr m i g = 0 t c = 110 c 2 m a i gt m peak gate trigger curren t v suppl y = +12 v ? v suppl y = +12 v ? v suppl y = -12 v ? v suppl y = -12 v ? r l = 10 w r l = 10 w r l = 10 w r l = 10 w t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s 2 -12 -9 2 0 50 -50 -50 m a v gt m peak gate trigger voltag e v suppl y = +12 v ? v suppl y = +12 v ? v suppl y = -12 v ? v suppl y = -12 v ? r l = 10 w r l = 10 w r l = 10 w r l = 10 w t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s 0.7 -0.8 -0.8 0. 9 2 -2 -2 2 v ? all voltages are with respect to main terminal 1 .
tr8 serie s silicon triac s ? all voltages are with respect to main t erminal 1 . notes: 6. this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body . 7. the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: r g = 100 w , t p(g ) = 20 m s, t r = 15 ns, f = 1 khz . v t m peak on-state voltag e i t m = 12 a i g = 50 m a (see note 6 ) 1. 6 2. 1 v i h holding curren t v suppl y = +12 v ? v suppl y = -12 v ? i g = 0 i g = 0 init ? i t m = 100 ma init ? i t m = -100 m a 5 - 9 30 -3 0 m a i l latching curren t v suppl y = +12 v ? v suppl y = -12 v ? (see note 7 ) 50 -5 0 m a dv/d t critical rate of rise of off-state voltag e v dr m = rated v dr m i g = 0 t c = 110 c 10 0 v/ s dv/d t (c ) critical rise of comm u - tation voltag e v dr m = rated v dr m i tr m = 12 a t c = 85 c 5 v/ s thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 1. 8 c/ w r q ja junction to free air thermal resistanc e 62. 5 c/ w electrical characteristics at 25 c case temperature (unless otherwise noted ) (continued ) paramete r test condition s mi n ty p ma x uni t typical characteristic s figure 1. figure 2. gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 0 1 1 10 100 1000 case temperature vs v aa = 12 v r l = 10 w w t p(g) = 20 s v supply i gtm + + + - - - - + g a t e t r i gg e r v o l t a g e t c - c a s e t e m p e r a t u r e - c - 60 - 40 - 20 0 20 40 60 80 1 00 1 2 0 v gt - gat e tr i g g e r vo l t ag e - v 0 1 1 1 0 c a se t e m pe r a t ur e v s v s u pp l y i g t m + + + - - - - + v a a = 1 2 v r l = 10 w w t p ( g ) = 2 0 s
tr8 series silicon triacs typical characteristic s figure 3. figure 4. figure 5. figure 6. h o l d i n g curr e n t t c - c as e t e m p e r a t u r e - c - 6 0 - 4 0 - 20 0 2 0 4 0 60 80 10 0 12 0 i h - ho l d i n g cu r r en t - m a 0 1 1 10 1 00 1 0 00 c a se t e m pe r a t ur e v s v s up p l y + - v aa = 12 v i g = 0 i n i t i a t i n g i t m = 10 0 m a g a t e f o r w a rd v o l t a g e i g f - g a t e f o r w a r d c u r r e n t - a 0 00 0 1 0 00 1 0 0 1 0 1 1 v g f - g a t e f o r w a r d v o l t a g e - v 0 0 1 0 1 1 1 0 g a t e f o r w a rd curr e n t v s i a = 0 t c = 2 5 c q u a d r a n t 1 l a t ch i n g curr e n t t c - c a s e t e m p e r a t u r e - c - 6 0 - 4 0 - 2 0 0 20 40 6 0 8 0 10 0 12 0 i l - l a t c h i n g c u r r e n t - m a 1 10 1 00 10 00 c a se t e m pe r a t ur e v s v a a = 12 v v s up p l y i g t m + + + - - - - + s ur g e o n - s t a t e curr e n t c o n s e c u t i v e 5 0 - h z h a l f - s i n e - w a v e c y c l e s 1 1 0 10 0 1 00 0 i t sm - pea k fu l l -si n e -w av e cu r r e n t - a 1 1 0 1 0 0 c y c l es o f curr e n t dur a t io n v s n o p r i o r d e v i c e c o n d u c t i o n g a t e c o n t r o l g u a r a n t e e d t c 8 5 c
tr8 serie s silicon triac s typical characteristic s figure 7. figure 8. parameter measurement informatio n m a x r m s o n - s t a t e curr e n t t c - c as e t e m p e r a t u r e - c 0 2 5 50 7 5 1 0 0 12 5 1 50 i t(rms) - ma x i m u m on -st at e cu r r e n t - a 0 1 2 3 4 5 6 7 8 9 10 c a se t e m p e r a t ur e v s m a x a ve r a g e p o w e r d i ss i p a t e d i t ( r m s ) - r m s o n - s t a t e c u r r e n t - a 0 2 4 6 8 10 12 14 16 p ( av ) - max i m u m a v e r ag e po w e r di s s i p a t ed - w 0 4 8 12 16 20 24 28 32 r m s o n - s t a t e curr e n t v s c o n d u c t i o n a n g l e = 36 0 a b o v e 8 a r m s t j = 11 0 c s e e i t s m f i g u r e v ac v mt2 i mt2 dut r g c1 r1 i g v ac i mt2 v mt2 i g i trm dv/dt 10% 63% l1 v drm 50 hz note a: the gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. the pulse is timed so that the off-state-voltage duration is approximately 800 s. figure 9.
tr8 series silicon triacs to-220 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembl y . mechanical dat a to220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see note c see note b 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 version 2 version 1 notes: a. the centre pin is in electrical contact with the mounting tab. b. mounting tab corner profile according to package version. c. typical fixing hole centre stand off height according to package version. version 1, 18.0 mm. version 2, 17.6 mm.
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